Solid state imaging device and production method for the same
DC
First Claim
Patent Images
1. A production method for a solid state imaging device comprising:
- a resist coating step of coating light receiving portions formed on a semiconductor substrate with a lens resin;
a patterning step of making the lens resin into desired patterns so as to form lens patterns; and
a lens forming step of forming micro lenses for collecting light on the light receiving portions by heating the lens patterns,wherein the lens forming step includes a step of forming the micro lenses at a temperature lower than a temperature at which the lens patterns are substantially completely melted.
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Abstract
The invention provides a solid state imaging device with high photosensitivity. A lens resin coated on the surface of the device is subjected to an exposing treatment using lens masks and a developing treatment, thereby forming lens patterns. After improving the light transmittance of the lens patterns through irradiation of UV, the lens patterns are heated so as to form micro lenses each in the shape of a hemisphere. At this point, the heating temperature is set at a temperature lower than a temperature at which the lens patterns are completely melted. As a result, the lens patterns are prevented from flowing out, and a distance between the adjacent micro lenses becomes equal to a distance between the adjacent lens patterns. Accordingly, by making small the distance between the adjacent lens patterns, the light receiving area of each micro lens can be enlarged.
48 Citations
11 Claims
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1. A production method for a solid state imaging device comprising:
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a resist coating step of coating light receiving portions formed on a semiconductor substrate with a lens resin; a patterning step of making the lens resin into desired patterns so as to form lens patterns; and a lens forming step of forming micro lenses for collecting light on the light receiving portions by heating the lens patterns, wherein the lens forming step includes a step of forming the micro lenses at a temperature lower than a temperature at which the lens patterns are substantially completely melted. - View Dependent Claims (2, 3)
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4. A production method for a solid state imaging device comprising:
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an insulating film forming step of forming an insulating film on a semiconductor substrate, the semiconductor substrate having light receiving portions and having recesses in areas where the light receiving portions are formed; and a flattening layer forming step of forming a flattening layer on the insulating film for flattening a surface of the insulating film, wherein the flattening layer forming step includes a step of forming the flattening layer out of a material having a larger refractive index than that of the insulating film.
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5. A production method for a solid state imaging device comprising:
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an insulating film forming step of forming an insulating film on a semiconductor substrate, the semiconductor substrate having light receiving portions and having recesses in areas where the light receiving portions are formed; a flattening layer forming step of forming a flattening layer on the insulating film for flattening a surface of the insulating film; a resist coating step of coating the light receiving portions with a lens resin; a patterning step of making the lens resin into desired patterns so as to form lens patterns; and a lens forming step of forming micro lenses for collecting light on the light receiving portions by heating the lens patterns, wherein the flattening layer forming step includes a step of forming the flattening layer out of a material having a larger refractive index than that of the insulating film, and the lens forming step includes a step of forming the micro lenses at a temperature lower than a temperature at which the lens patterns are substantially completely melted. - View Dependent Claims (6, 7)
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8. A production method for a solid state imaging device comprising:
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an insulating film forming step of forming an insulating film on a semiconductor substrate, the semiconductor substrate having light receiving portions and having recesses in areas where the light receiving portions are formed; and a flattening layer forming step of forming a flattening layer on the insulating film for flattening a surface of the insulating film, wherein the flattening layer forming step includes a step of forming the flattening layer out of a material which has a larger refractive index than that of the insulating film and is melted into a liquid state through a heat treatment, so as to melt the material by heating, thereby flattening a surface of the flattening layer.
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9. A production method for a solid state imaging device comprising:
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an insulating film forming step of forming an insulating film on a semiconductor substrate, the semiconductor substrate having light receiving portions and having recesses in areas where the light receiving portions are formed; a flattening layer forming step of forming a flattening layer on the insulating film for flattening a surface of the insulating film; a resist coating step of coating the light receiving portions with a lens resin; a patterning step of making the lens resin into desired patterns so as to form lens patterns; and a lens forming step of forming micro lenses for collecting light on the light receiving portions by heating the lens patterns, wherein the flattening layer forming step includes a step of forming the flattening layer out of a material which has a larger refractive index than that of the insulating film and is melted into a liquid state through a heat treatment, so as to melt the material by heating, thereby flattening a surface of the flattening layer, and the lens forming step includes a step of forming the micro lenses at a temperature lower than a temperature at which the lens patterns are substantially completely melted. - View Dependent Claims (10, 11)
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Specification
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Litigation Data
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Current AssigneeCollabo Innovations, Inc. (Wi-LAN Inc.)
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Original AssigneeMatsushita Electric Corporation (Panasonic Holdings Corporation)
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InventorsIchikawa, Michiyo, Tsukamoto, Akira, Shigeta, Yoko
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Primary Examiner(s)Chaudhuri, Olik
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Assistant Examiner(s)COLEMAN, WILLIAM D
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Application NumberUS09/005,048Time in Patent Office662 DaysField of Search438/65, 438/70, 257/59US Class Current438/65CPC Class CodesH01L 27/14627 MicrolensesH01L 31/02162 for filtering or shielding ...H01L 31/02327 the optical elements being ...
