Solid-state imaging device
DCFirst Claim
1. A solid-state imaging device comprising a plurality of pixels, each pixel comprising:
- a semiconductor substrate;
a photo-receiving portion formed in the semiconductor substrate;
a diffusion region formed in the semiconductor substrate;
a first insulating film formed on the semiconductor substrate;
a gate electrode formed on the first insulating film at least between the photo-receiving portion and the diffusion region; and
a read-out circuit, which is electrically connected to either one of the photo-receiving portion and the diffusion region;
wherein a reflection reducing film is formed on the first insulating film above a region of the semiconductor substrate including at least part of the photo-receiving portion and excluding at least part of the diffusion region, the reflection reducing film including a material whose refractive index is smaller than that of silicon and is larger than that of silicon oxide.
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Abstract
A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a detecting region formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate, a gate electrode formed on the insulating film above the region between the photo-receiving portion and the detecting region; and a read-out circuit, which is electrically connected to the detecting portion. A reflection reducing film is formed on the insulating film above the region including at least one part of the photo-receiving portion and excluding at least one part of the detecting portion in the semiconductor substrate. With this solid-state imaging device and with the method for manufacturing the same, a highly sensitive MOS solid-state imaging device and the method for manufacturing the same are provided.
94 Citations
12 Claims
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1. A solid-state imaging device comprising a plurality of pixels, each pixel comprising:
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a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a diffusion region formed in the semiconductor substrate; a first insulating film formed on the semiconductor substrate; a gate electrode formed on the first insulating film at least between the photo-receiving portion and the diffusion region; and a read-out circuit, which is electrically connected to either one of the photo-receiving portion and the diffusion region; wherein a reflection reducing film is formed on the first insulating film above a region of the semiconductor substrate including at least part of the photo-receiving portion and excluding at least part of the diffusion region, the reflection reducing film including a material whose refractive index is smaller than that of silicon and is larger than that of silicon oxide. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A solid-state imaging device comprising a plurality of pixels, each pixel comprising:
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a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a diffusion region formed in the semiconductor substrate; a first insulating film formed on the semiconductor substrate; a gate electrode formed above the semiconductor substrate at least between the photo-receiving portion and the diffusion region; and a read-out circuit, which is electrically connected to either one of the photo-receiving portion and the diffusion region; wherein a reflection reducing film is formed on the first insulating film above a region of the semiconductor substrate including at least part of the photo-receiving portion and excluding at least part of the diffusion region, and the reflection reducing film includes a material whose refractive index is smaller than that of silicon and is larger than that of silicon oxide. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification