Method for forming a gate electrode on a semiconductor substrate
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First Claim
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1. A method for forming a gate electrode on a semiconductor substrate, the method comprising the steps of:
- forming a gate insulating layer on a semiconductor substrate;
forming a polysilicon layer on the semiconductor substrate;
forming a tungsten silicide layer on the polysilicon layer;
forming a diffusion barrier layer on the tungsten silicide layer;
forming a tungsten layer on the diffusion barrier layer;
crystallizing the diffusion barrier layer;
forming a first insulating layer on the tungsten layer;
forming a gate electrode;
forming an oxide layer; and
forming a second insulating layer.
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Abstract
A method for forming a gate electrode on a semiconductor substrate that includes forming a gate insulating layer on a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, forming a tungsten silicide layer on the polysilicon layer, forming a diffusion barrier layer on the tungsten silicide layer, forming a tungsten layer on the diffusion barrier layer, crystallizing the diffusion barrier layer, forming a first insulating layer on the tungsten layer, forming a gate electrode, forming an oxide layer, and forming a second insulating layer.
83 Citations
41 Claims
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1. A method for forming a gate electrode on a semiconductor substrate, the method comprising the steps of:
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forming a gate insulating layer on a semiconductor substrate;
forming a polysilicon layer on the semiconductor substrate;
forming a tungsten silicide layer on the polysilicon layer;
forming a diffusion barrier layer on the tungsten silicide layer;
forming a tungsten layer on the diffusion barrier layer;
crystallizing the diffusion barrier layer;
forming a first insulating layer on the tungsten layer;
forming a gate electrode;
forming an oxide layer; and
forming a second insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
forming a photoresist on the first insulating layer;
patterning the photoresist; and
selectively removing the first insulating layer, the tungsten layer, the diffusion barrier layer, the tungsten silicide layer, the polysilicon layer, and the gate insulating layer by using the photoresist as a mask.
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17. The method of claim 1, wherein said step of forming an oxide layer includes performing a selective oxidation process in the substrate.
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18. The method of claim 17, wherein the selective oxidation process is performed in an ambient vapor of H2O/H2.
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19. The method of claim 17, wherein the selective oxidation process is performed for approximately 1˜
- 60 minutes at a temperature of approximately 800˜
1000°
C.
- 60 minutes at a temperature of approximately 800˜
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20. The method of claim 17, wherein the selective oxidation process is performed with a PH20/PH2 of 1E-6˜
- 1.
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21. The method of claim 17, wherein performing a selective oxidation process includes using a carrier gas of one or more of Ar and N2.
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22. The method of claim 1, wherein said step of forming a second insulating layer includes forming a second insulating layer on a side of said first insulating layer and on a side of said gate electrode.
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23. A method for forming a gate electrode on a semiconductor substrate, the method comprising the steps of:
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forming a gate insulating layer on a semiconductor substrate;
forming a polysilicon layer on the semiconductor substrate;
forming a tungsten silicide layer on the polysilicon layer;
forming a diffusion barrier layer on the tungsten silicide layer;
forming a tungsten layer on the diffusion barrier layer;
crystallizing the diffusion barrier layer by performing an annealing process in the semiconductor substrate;
forming a first insulating layer on the tungsten layer;
forming a gate electrode by selectively patterning the first insulating layer, the tungsten layer, the diffusion barrier layer, the tungsten silicide layer, the polysilicon layer, and the gate insulating layer;
performing a selective oxidation process in the semiconductor substrate; and
forming a second insulating layer. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
forming a photoresist on the first insulating layer;
patterning the photoresist; and
selectively removing the first insulating layer, the tungsten layer, the diffusion barrier layer, the tungsten silicide layer, the polysilicon layer, and the gate insulating layer by using the photoresist as a mask.
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37. The method of claim 23, wherein the selective oxidation process is performed in an ambient vapor of H2O/H2.
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38. The method of claim 23, wherein the selective oxidation process is performed for approximately 1˜
- 60 minutes at a temperature of approximately 800˜
1000°
C.
- 60 minutes at a temperature of approximately 800˜
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39. The method of claim 23, wherein the selective oxidation process is performed by PH20/PH2 of 1E-6˜
- 1.
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40. The method of claim 23, wherein said step of performing a selective oxidation process includes using a carrier gas of one or more of an Ar and N2.
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41. The method of claim 23, wherein said step of forming a second insulating layer includes forming a second insulating layer on a side of said first insulating layer and on a side of said gate electrode.
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Litigation Data
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Current AssigneeMOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management)
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Original AssigneeHyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
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InventorsLee, Byung Hak
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Primary Examiner(s)Booth, Richard
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Application NumberUS09/798,942Time in Patent Office231 DaysField of Search257/413, 257/388, 257/412, 438/592, 438/585, 438/653US Class Current438/592CPC Class CodesH01L 21/28061 the conductor comprising a ...H01L 21/28247 passivation or protection o...H01L 29/4941 with a barrier layer betwee...
