Semiconductor devices, and semiconductor processing methods
DCFirst Claim
1. A semiconductor processing method, comprising:
- forming a conductive copper-containing material over a semiconductive substrate;
forming a second material proximate the conductive material; and
forming a barrier layer between the conductive material and the second material, the barrier layer comprising (CH3)xSi3N(4−
x), with x being greater than 0 and no greater than 4.
2 Assignments
Litigations
1 Petition
Accused Products
Abstract
In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.
170 Citations
38 Claims
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1. A semiconductor processing method, comprising:
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forming a conductive copper-containing material over a semiconductive substrate;
forming a second material proximate the conductive material; and
forming a barrier layer between the conductive material and the second material, the barrier layer comprising (CH3)xSi3N(4−
x), with x being greater than 0 and no greater than 4.- View Dependent Claims (2, 3, 4, 5, 7, 8, 9, 10, 11)
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6. A semiconductor processing method, comprising:
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forming a conductive copper-containing material over a semiconductive substrate;
forming a second material proximate the conductive material;
forming a barrier layer between the conductive material and the second material, the barrier layer comprising a compound having silicon chemically bonded to both nitrogen and an organic material, the barrier layer being in physically contact with the second material; and
wherein the second material comprises silicon dioxide.
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12. A semiconductor processing method, comprising:
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providing a semiconductive substrate;
forming a first material over the semiconductive substrate;
forming a barrier layer proximate the first material, the barrier layer comprising (CH3)xSi3N(4−
x), with x being greater than 0 and no greater than 4; and
forming a second material separated from the first material by the barrier layer. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A semiconductor processing method, comprising:
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providing a semiconductive substrate; and
forming a layer over the semiconductive substrate, the layer comprising (CH3)xSi3N(4−
x), with x being greater than 0 and no greater than 4.- View Dependent Claims (19, 20, 21, 22, 23)
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24. A semiconductor device, comprising:
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a semiconductive substrate; and
a layer over the semiconductive substrate, the layer comprising (CH3)xSi3N(4−
x), with x being greater than 0 and no greater than 4.- View Dependent Claims (25, 26)
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27. A semiconductor device, comprising:
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a semiconductive substrate;
a first material over the semiconductive substrate;
a second material proximate the first material; and
a barrier layer separating the second material from the first material, the barrier layer comprising (CH3)xSi3N(4−
x), with x being greater than 0 and no greater than 4.- View Dependent Claims (28, 29, 30, 31)
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32. A semiconductor device, comprising:
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a semiconductive substrate;
a conductive copper-containing material over the semiconductive substrate;
a second material proximate the conductive material; and
a barrier layer between the conductive material and the second material, the barrier layer comprising (CH3)xSi3N(4−
x), with x being greater than 0 and no greater than 4.- View Dependent Claims (33, 34, 35, 37, 38)
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36. A semiconductor device, comprising:
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a semiconductive substrate;
a conductive copper-containing material over the semiconductive substrate;
a second material proximate the conductive material;
a barrier layer between the conductive material and the second material, the barrier layer comprising a compound having silicon chemically bonded to both nitrogen and an organic material, the barrier layer being in physical contact with the second material; and
wherein the second material comprises silicon dioxide.
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Specification