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Semiconductor devices, and semiconductor processing methods

DC
  • US 6,828,683 B2
  • Filed: 12/23/1998
  • Issued: 12/07/2004
  • Est. Priority Date: 12/23/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor processing method, comprising:

  • forming a conductive copper-containing material over a semiconductive substrate;

    forming a second material proximate the conductive material; and

    forming a barrier layer between the conductive material and the second material, the barrier layer comprising (CH3)xSi3N(4−

    x)
    , with x being greater than 0 and no greater than 4.

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