Method for forming conductive line of semiconductor device
DCFirst Claim
Patent Images
1. A method for forming conductive line of semiconductor device, comprising the steps of:
- forming a lower insulating film on a semiconductor substrate including a gate electrode and an impurity junction region;
etching the lower insulating film to form a first contact hole exposing a top surface of the gate electrode and a second contact hole exposing the impurity junction region;
forming a cobalt silicide layer on the impurity junction region exposed through the second contact hole;
forming a stacked structure of a Ti film and a TiN film on the semiconductor substrate including the first and the second contact holes;
forming a conductive layer on the lower insulating film including the first and the second contact holes; and
patterning the conductive layer to form a conductive line pattern.
12 Assignments
Litigations
0 Petitions
Accused Products
Abstract
A method for conductive line of semiconductor device is disclosed. A cobalt silicide layer is formed on an impurity junction region exposed through a contact hole. The cobalt silicide layer stabilizes a contact resistance so that the contact resistance of the impurity junction region does not vary in subsequent thermal processes.
7 Citations
7 Claims
-
1. A method for forming conductive line of semiconductor device, comprising the steps of:
-
forming a lower insulating film on a semiconductor substrate including a gate electrode and an impurity junction region; etching the lower insulating film to form a first contact hole exposing a top surface of the gate electrode and a second contact hole exposing the impurity junction region; forming a cobalt silicide layer on the impurity junction region exposed through the second contact hole; forming a stacked structure of a Ti film and a TiN film on the semiconductor substrate including the first and the second contact holes; forming a conductive layer on the lower insulating film including the first and the second contact holes; and
patterning the conductive layer to form a conductive line pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification