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Method for forming conductive line of semiconductor device

DC
  • US 7,101,791 B2
  • Filed: 06/30/2004
  • Issued: 09/05/2006
  • Est. Priority Date: 12/24/2003
  • Status: Active Grant
First Claim
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1. A method for forming conductive line of semiconductor device, comprising the steps of:

  • forming a lower insulating film on a semiconductor substrate including a gate electrode and an impurity junction region;

    etching the lower insulating film to form a first contact hole exposing a top surface of the gate electrode and a second contact hole exposing the impurity junction region;

    forming a cobalt silicide layer on the impurity junction region exposed through the second contact hole;

    forming a stacked structure of a Ti film and a TiN film on the semiconductor substrate including the first and the second contact holes;

    forming a conductive layer on the lower insulating film including the first and the second contact holes; and

    patterning the conductive layer to form a conductive line pattern.

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