Image sensor with decreased optical interference between adjacent pixels
DCFirst Claim
1. An image sensor comprising:
- a plurality of pixels, each including;
a photodiode; and
a dummy metal line;
wherein;
the dummy metal lines in adjacent pixels of the plurality of pixels combine to form a light shield; and
the dummy metal lines only partially cover areas surrounding each of the photodiodes.
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Accused Products
Abstract
An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.
15 Citations
59 Claims
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1. An image sensor comprising:
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a plurality of pixels, each including; a photodiode; and a dummy metal line; wherein; the dummy metal lines in adjacent pixels of the plurality of pixels combine to form a light shield; and the dummy metal lines only partially cover areas surrounding each of the photodiodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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49. An image sensor pixel comprising:
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a photodiode in a pixel region of the image sensor pixel; a metal line in the pixel region configured to connect the image sensor pixel to at least one of a logic circuit or a power line; a dummy metal line in the pixel region and positioned to block a light from outside of the pixel region from impinging on the photodiode; a dielectric positioned between the metal line and the dummy metal line; wherein the metal line, the dummy metal line, and the dielectric form a capacitor; and wherein the dummy metal line only partially covers areas surrounding the photodiode. - View Dependent Claims (50)
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51. An image sensor pixel comprising:
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a photodiode in a pixel region of the image sensor pixel; a metal line in the pixel region configured to connect the image sensor pixel to at least one of a logic circuit or a power line; and a first dummy metal line in the pixel region and positioned to block a light from outside of the pixel region from impinging on the photodiode; wherein the first dummy metal line comprises a via contact including a top surface and a bottom surface. - View Dependent Claims (52, 53, 54, 55, 56, 57, 58)
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59. An image sensor pixel comprising:
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a peripheral region including; a first layer comprising a first peripheral region metal line; a second layer positioned above the first layer and comprising a second peripheral region metal line; and a via contact connecting the first peripheral region metal line with the second peripheral region metal line; and a pixel region including; the first layer comprising a first pixel region metal line; the second layer positioned above the first layer; and a via contact positioned between the first pixel region metal line and the second layer; wherein the via contact in the pixel region comprises a dummy metal line positioned to block a light from outside of the pixel region.
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Specification