Solid-state imaging device
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Accused Products
Abstract
In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
22 Citations
29 Claims
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1-7. -7. (canceled)
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8. A solid-state imaging device, comprising:
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a plurality of photodiodes for performing optical-electrical conversion, each of the photodiodes being two-dimensionally arranged in row and column directions on a semiconductor substrate;
a plurality of transfer transistors for transferring a signal electric charge obtained from performing the optical-electrical conversion, each of the transfer transistors being provided on the semiconductor substrate for a corresponding one of the photodiodes;
a plurality of floating diffusion layers for temporarily storing the transferred signal electric charge, each of the floating diffusion layers being provided for at least one of the corresponding photodiodes and at least one of the corresponding transfer transistors;
an amplifier transistor for amplifying the signal electric charge supplied to a gate thereof, the amplifier transistor being provided on the semiconductor substrate; and
a reset transistor for resetting the signal electric charge stored in the floating diffusion layer, the amplifier transistor being provided on the semiconductor substrate, wherein an output signal in accordance with a signal electric charge stored in an photodiode, included in a given one of active regions, is outputted from an amplifier transistor in an active region adjacent to the given one of active regions in a direction other than the row direction, and a gate of the reset transistor and a gate of the amplifier transistor are located in parallel to each other. - View Dependent Claims (10, 12, 14, 16, 18, 19, 20, 22, 24, 25, 26, 27, 28, 29)
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9. A solid-state imaging device, comprising:
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a plurality of photodiodes for performing optical-electrical conversion, each of the photodiodes being two-dimensionally arranged in row and column directions on a semiconductor substrate;
a plurality of transfer transistors for transferring a signal electric charge obtained from performing the optical-electrical conversion, each of the transfer transistors being provided on the semiconductor substrate for a corresponding one of the photodiodes;
a plurality of floating diffusion layers for temporarily storing the transferred signal electric charge, each of the floating diffusion layers being provided for at least one of the corresponding photodiodes and at least one of the corresponding transfer transistors;
an amplifier transistor for amplifying the signal electric charge supplied to a gate thereof, the amplifier transistor being provided on the semiconductor substrate; and
a reset transistor for resetting the signal electric charge stored in the floating diffusion layer, the amplifier transistor being provided on the semiconductor substrate;
a plurality of vertical signal lines each commonly connected to said amplifier transistors arranged in a same row, wherein an output signal in accordance with a signal electric charge stored in a photodiode, included in a given one of active regions, is outputted from an amplifier transistor in an active region adjacent to the given one of active regions, and the gate of the reset transistor and the vertical signal lines are located perpendicularly to each other. - View Dependent Claims (11, 13, 15, 17, 21, 23)
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Specification