High-power pulsed magnetically enhanced plasma processing
DC CAFCFirst Claim
1. A magnetically enhanced plasma processing apparatus comprising:
- an anode;
a cathode that is positioned adjacent to the anode and forming a gap there between;
an ionization source that generates a weakly-ionized plasma proximate to the cathode;
a magnet that is positioned to generate a magnetic field proximate to the weakly-ionized plasma, the magnetic field substantially trapping electrons in the weakly-ionized plasma proximate to the cathode;
a power supply that produces an electric field across the gap, the electric field generating excited atoms in the weakly-ionized plasma and generating secondary electrons from the cathode, the secondary electrons ionizing the excited atoms, thereby creating a strongly-ionized plasma comprising a plurality of ions; and
a voltage supply that applies a bias voltage to a substrate that is positioned proximate to the cathode, the bias voltage causing ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate.
1 Assignment
Litigations
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Accused Products
Abstract
Magnetically enhanced plasma processing methods and apparatus are described. A magnetically enhanced plasma processing apparatus according to the present invention includes an anode and a cathode that is positioned adjacent to the anode. An ionization source generates a weakly-ionized plasma proximate to the cathode. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in a gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma. A voltage supply applies a bias voltage to a substrate that is positioned proximate to the cathode that causes ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate.
78 Citations
37 Claims
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1. A magnetically enhanced plasma processing apparatus comprising:
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an anode;
a cathode that is positioned adjacent to the anode and forming a gap there between;
an ionization source that generates a weakly-ionized plasma proximate to the cathode;
a magnet that is positioned to generate a magnetic field proximate to the weakly-ionized plasma, the magnetic field substantially trapping electrons in the weakly-ionized plasma proximate to the cathode;
a power supply that produces an electric field across the gap, the electric field generating excited atoms in the weakly-ionized plasma and generating secondary electrons from the cathode, the secondary electrons ionizing the excited atoms, thereby creating a strongly-ionized plasma comprising a plurality of ions; and
a voltage supply that applies a bias voltage to a substrate that is positioned proximate to the cathode, the bias voltage causing ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of magnetically enhanced plasma processing, the method comprising:
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ionizing a feed gas to generate a weakly-ionized plasma proximate to a cathode;
generating a magnetic field proximate to the weakly-ionized plasma, the magnetic field substantially trapping electrons in the weakly-ionized plasma proximate to the cathode;
applying an electric field across the weakly-ionized plasma that excites atoms in the weakly-ionized plasma and that generates secondary electrons from the cathode, the secondary electrons ionizing the excited atoms, thereby creating a strongly-ionized plasma comprising a plurality of ions; and
applying a bias voltage to a substrate that is positioned proximate to the cathode, the bias voltage causing ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A method of magnetically enhanced plasma processing, the method comprising:
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ionizing a volume of feed gas to form a weakly-ionized plasma proximate to a cathode;
generating a magnetic field proximate to the weakly-ionized plasma, the magnetic field substantially trapping electrons in the weakly-ionized plasma proximate to the cathode;
applying an electrical pulse across the weakly-ionized plasma to generate a strongly-ionized plasma comprising a first plurality of ions;
exchanging the strongly-ionized plasma with a second volume of feed gas while applying the electrical pulse across the second volume of feed gas to generate a strongly-ionized plasma comprising a second plurality of ions; and
applying a bias voltage to a substrate that is positioned proximate to the cathode, the bias voltage causing ions in the first and the second plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate. - View Dependent Claims (31, 32, 33, 34, 35)
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36. A magnetically enhanced plasma processing apparatus comprising:
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means for ionizing a feed gas to generate a weakly-ionized plasma proximate to a cathode;
means for generating a magnetic field proximate to the weakly-ionized plasma, the magnetic field substantially trapping electrons in the weakly-ionized plasma proximate to the cathode;
means for applying an electric field across the weakly-ionized plasma that excites atoms in the weakly-ionized plasma and that generates secondary electrons from the cathode, the secondary electrons ionizing the excited atoms, thereby creating a strongly-ionized plasma comprising a plurality of ions; and
means for applying a bias voltage to a substrate that is positioned proximate to the cathode, the bias voltage causing ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate.
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37. A magnetically enhanced plasma processing apparatus comprising:
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means for ionizing a volume of feed gas to form a weakly-ionized plasma proximate to a cathode;
means for generating a magnetic field proximate to the weakly-ionized plasma, the magnetic field substantially trapping electrons in the weakly-ionized plasma proximate to the cathode;
means for applying an electrical pulse across the weakly-ionized plasma to generate a strongly-ionized plasma comprising a first plurality of ions;
means for exchanging the strongly-ionized plasma with a second volume of feed gas while applying the electrical pulse across the second volume of feed gas to generate a strongly-ionized plasma comprising a second plurality of ions; and
means for applying a bias voltage to a substrate that is positioned proximate to the cathode, the bias voltage causing ions in the first and the second plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate.
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Specification