Semiconductor light-emitting device and method for manufacturing the same
DC CAFCFirst Claim
Patent Images
1. A semiconductor light-emitting device comprising:
- a substrate;
a textured district defined on the surface, of said substrate comprising a plurality of etched trenches having a sloped etching profile with a smooth rotation of micro-facets without a prescribed angle of inclination;
a first layer disposed on said textured district;
comprising a plurality of inclined lower portions so as to guide the extended lattice defects away from propagating into the active layer, said first layer and said substrate form a lattice-mismatched misfit system, said substrate is selected from the group comprising group III-V, group IV, group II-VI elements and alloys, ZnO, spinel and sapphire; and
a light-emitting structure containing an active layer disposed on said first layer.
1 Assignment
Litigations
4 Petitions
Reexamination
Accused Products
Abstract
Semiconductor light emitting device and methods for its manufacture comprises a plurality of textured district defined on the surface of the substrate. The initial inclined layer deposition serves to guide the extended defects to designated gettering centers in the trench region where the defects combine with each other. As a result, the defect density in the upper section of the structure is much reduced. By incorporating a blocking mask in the structure, the free propagation of extended defects into the active layer is further restricted. The present invention is useful in the fabrication of semiconductor light emitting devices in misfit systems.
51 Citations
14 Claims
-
1. A semiconductor light-emitting device comprising:
-
a substrate;
a textured district defined on the surface, of said substrate comprising a plurality of etched trenches having a sloped etching profile with a smooth rotation of micro-facets without a prescribed angle of inclination;
a first layer disposed on said textured district;
comprising a plurality of inclined lower portions so as to guide the extended lattice defects away from propagating into the active layer, said first layer and said substrate form a lattice-mismatched misfit system, said substrate is selected from the group comprising group III-V, group IV, group II-VI elements and alloys, ZnO, spinel and sapphire; and
a light-emitting structure containing an active layer disposed on said first layer. - View Dependent Claims (2, 3, 4)
-
-
5. A semiconductor light-emitting device comprising:
-
a substrate;
a textured district defined on the surface of said substrate comprising a plurality of mask districts spaced by etched trenches having a sloped etching profile with a smooth rotation of micro-face without a prescribed angle of inclination;
a first layer disposed on said textured district;
comprising a plurality of inclined lower portions so as to guide the extended lattice defects away from propagating into the active layer, said first layer and said substrate form a lattice-mismatched misfit system, said substrate is selected from the group comprising group III-V, group IV, group II-VI element, and alloys, ZnO, spinel and sapphire; and
a light-emitting structure containing an active layer disposed on said first layer. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14)
-
Specification